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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3894
DESCRIPTION *With TO-3PML package *High speed *High breakdown voltage *High reliability APPLICATIONS *Ultrahigh-definition CRT display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 1500 800 6 6 16 3.0 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3894
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
800
V
VCEsat VBEsat
Collector-emitter saturation voltage
IC=4A ;IB=1A IC=4A ;IB=1A
5.0
V
Base-emitter saturation voltage
1.5
V A
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
ICES
Collector cut-off current
VCE=1500V; RBE=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=5V
4
8
Switching times s s
tstg
Storage time
tf
Fall time
IC=4A ; VCC=200V IB1=0.8A; IB2=1.6A RL=50
3.0
0.1
0.2
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3894
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3894
4


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